Giant Magneto-Impedance of Co50Ni22Ga28 Alloy with High Chemical Ordering

The microstructure of CosoNi22Ga28 ribbon with the L10 structure is examined. The band-like morphology is observed. These bands with the width in a range of 40-200 nm appear along the transverse direction of the ribbon. The giant magnetoimpedance （GMI） effect in this alloy is measured. The results show that Co5oNi22Ga28 exhibits a sharp peak of the GAI effect. The maximum GAH ratio up to 360% is detected. The GMI effect measured versus temperature shows large jumps of the magnetoimpedance amplitude at the reversal martensitic transformation temperature 240℃ and Curie temperature 375℃C respectively. The jump ratios of the magnetoimpedance amplitude examined at these temperatures are about 5 and 10, respectively.     

激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶     

关于实Hilbert环

通过引进“强实Hilbert环”这一概念,本文证明了,一个环A是强实Hilbert环,当且仅当多项式环A[X]是实Hilbert环,当且仅当A[X]的每个实极大理想在A上的局限是实极大的,从而文献[1]中两个主要结果被否定.此外,本文还研究了所谓的“严格的实Hilbert环”,这类环对于半代数零点定理等方面的探讨更具应用意义.     

CORBA~( ):一个具有自卫智能体的扩展CORBA

将自卫机制加入OOP成为AOP以提高CORBA中软件的强健性和防卫能力,在CORBA这个异构环境中,一个对象申请服务之后就需等待,如果应答迟迟不到则有可能永远等待下去,为避免这种现象的产生和蔓延,在客户和服务方的行为中加入超时机制(timeout mecha-nism)并采用利己或利他策略,使得对象可独立地根据当前环境和时间决定下一步骤,将这种在协作者失败的情况下仍能生存的对象称为自卫智能体,加入白卫智能体的CORBA称为CORBA~( ),由于智能体可在任何条件下生存,CORBA~( )可为用户提供可靠的服务,也就能实现CORBA~( )中软件构成的强健性。     

Characterization of a pectic polysaccharide from the fruit of <Emphasis Type="Italic">Ziziphus jujuba</Emphasis>

A pectic polysaccharide was isolated from the fruits of Ziziphus jujuba Mill. cv. jinsixiaozao Hort. and its structure was characterized by acid hydrolysis, methylation, and NMR spectroscopies. The purified fraction Ju-B-7 had a molecular mass of over 2000 kDa. Chemical and spectroscopic analyses indicated that Ju-B-7 is composed mainly of α-1,4-linked D-galactopyranosyluronic acid and 1,2-linked L-rhamnose with a molar ratio of 8.1:1. It can significantly stimulate spleen cell proliferation in vitro (P<0.01, 10 μmg/mL). Published in Khimiya Prirodnykh Soedinenii, No. 4, pp. 311–312, July–August, 2007.     

D—AKNS族的换位表示

本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系.     

空位在金刚石近(001)表面扩散的分子动力学模拟

用分子动力学方法模拟了空位在金刚石近(001)表面的扩散过程,研究了温度对空位扩散的影响.结果表明,当温度为1000K左右时,位于近表面第二层上的空位开始向表面运动;当温度在1400—2000K时,空位完全扩散到表面.这与实验结果和其他计算结果符合得很好.同时发现,温度为1400—1800K时,空位的扩散经历了两次迁移运动,其分别对应了均方位移图中的两个极大值.在不施加任何约束的条件下得到了空位的动态扩散路径,空位在金刚石近(001)表面的扩散势垒约为042eV.并探讨了一定温度下空位数目增多及其不同排列 关键词： 金刚石 空位 扩散 分子动力学     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.